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      High-responsivity UV-Vis Photodetector Based on Transferable WS 2 Film Deposited by Magnetron Sputtering

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          Abstract

          The two-dimensional layered semiconducting tungsten disulfide (WS 2) film exhibits great promising prospects in the photoelectrical applications because of its unique photoelectrical conversion property. Herein, in this paper, we report the simple and scalable fabrication of homogeneous, large-size and transferable WS 2 films with tens-of-nanometers thickness through magnetron sputtering and post annealing process. The produced WS 2 films with low resistance (4.2 kΩ) are used to fabricate broadband sensitive photodetectors in the ultraviolet to visible region. The photodetectors exhibit excellent photoresponse properties, with a high responsivity of 53.3 A/W and a high detectivity of 1.22 × 10 11 Jones at 365 nm. The strategy reported paves new way towards the large scale growth of transferable high quality, uniform WS 2 films for various important applications including high performance photodetectors, solar cell, photoelectrochemical cell and so on.

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          Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils

          Aruna Velamakanni, Rodney Ruoff, Luigi Colombo … (2009)
          Graphene has been attracting great interest because of its distinctive band structure and physical properties. Today, graphene is limited to small sizes because it is produced mostly by exfoliating graphite. We grew large-area graphene films of the order of centimeters on copper substrates by chemical vapor deposition using methane. The films are predominantly single layer graphene with a small percentage (less than 5%) of the area having few layers, and are continuous across copper surface steps and grain boundaries. The low solubility of carbon in copper appears to help make this growth process self-limiting. We also developed graphene film transfer processes to arbitrary substrates, and dual-gated field-effect transistors fabricated on Si/SiO2 substrates showed electron mobilities as high as 4050 cm2V-1s-1 at room temperature.
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            Extraordinary sunlight absorption and one nanometer thick photovoltaics using two-dimensional monolayer materials.

            Marco Bernardi, Maurizia Palummo, Jeffrey C. Grossman (2013)
            Graphene and monolayer transition metal dichalcogenides (TMDs) are promising materials for next-generation ultrathin optoelectronic devices. Although visually transparent, graphene is an excellent sunlight absorber, achieving 2.3% visible light absorbance in just 3.3 Å thickness. TMD monolayers also hold potential as sunlight absorbers, and may enable ultrathin photovoltaic (PV) devices due to their semiconducting character. In this work, we show that the three TMD monolayers MoS2, MoSe2, and WS2 can absorb up to 5-10% incident sunlight in a thickness of less than 1 nm, thus achieving 1 order of magnitude higher sunlight absorption than GaAs and Si. We further study PV devices based on just two stacked monolayers: (1) a Schottky barrier solar cell between MoS2 and graphene and (2) an excitonic solar cell based on a MoS2/WS2 bilayer. We demonstrate that such 1 nm thick active layers can attain power conversion efficiencies of up to ~1%, corresponding to approximately 1-3 orders of magnitude higher power densities than the best existing ultrathin solar cells. Our work shows that two-dimensional monolayer materials hold yet untapped potential for solar energy absorption and conversion at the nanoscale.
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              Ultrasensitive solution-cast quantum dot photodetectors.

              Gerasimos Konstantatos, Ian M. Howard, Armin Fischer … (2006)
              Solution-processed electronic and optoelectronic devices offer low cost, large device area, physical flexibility and convenient materials integration compared to conventional epitaxially grown, lattice-matched, crystalline semiconductor devices. Although the electronic or optoelectronic performance of these solution-processed devices is typically inferior to that of those fabricated by conventional routes, this can be tolerated for some applications in view of the other benefits. Here we report the fabrication of solution-processed infrared photodetectors that are superior in their normalized detectivity (D*, the figure of merit for detector sensitivity) to the best epitaxially grown devices operating at room temperature. We produced the devices in a single solution-processing step, overcoating a prefabricated planar electrode array with an unpatterned layer of PbS colloidal quantum dot nanocrystals. The devices showed large photoconductive gains with responsivities greater than 10(3) A W(-1). The best devices exhibited a normalized detectivity D* of 1.8 x 10(13) jones (1 jones = 1 cm Hz(1/2) W(-1)) at 1.3 microm at room temperature: today's highest performance infrared photodetectors are photovoltaic devices made from epitaxially grown InGaAs that exhibit peak D* in the 10(12) jones range at room temperature, whereas the previous record for D* from a photoconductive detector lies at 10(11) jones. The tailored selection of absorption onset energy through the quantum size effect, combined with deliberate engineering of the sequence of nanoparticle fusing and surface trap functionalization, underlie the superior performance achieved in this readily fabricated family of devices.
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                Author and article information

                Journal
                Journal ID (nlm-ta): Sci Rep
                Journal ID (iso-abbrev): Sci Rep
                Title: Scientific Reports
                Publisher: Nature Publishing Group
                ISSN (Electronic): 2045-2322
                Publication date (Electronic): 29 January 2016
                Publication date Collection: 2016
                Volume: 6
                Electronic Location Identifier: 20343
                Affiliations
                [1 ]Department of Applied Physics, The Hong Kong Polytechnic University , Hung Hom, Kowloon, Hong Kong
                Author notes
                [*]

                These authors contributed equally to this work.

                Article
                Publisher Item ID: srep20343
                DOI: 10.1038/srep20343
                PMC ID: 4731746
                PubMed ID: 26822972
                SO-VID: fee2e7a3-f7bf-4c66-acc0-0df6f70618ea
                Copyright © Copyright © 2016, Macmillan Publishers Limited
                License:

                This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/

                History
                Date received : 14 October 2015
                Date accepted : 30 December 2015
                Categories
                Subject: Article

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