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      Transport Measurements

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      Springer US

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          Mechanical and electrical properties of epitaxial silicon films on spinel

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            Silicon‐on‐insulator material formed by oxygen implantation and high‐temperature annealing: Carrier transport, oxygen activity, and interface properties

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              A pile‐up phenomenon during arsenic diffusion in silicon‐on‐insulator structures formed by oxygen implantation

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                Book Chapter
                1995
                : 119-143
                10.1007/978-1-4615-2245-4_5
                53a39b97-1a2f-4560-bda6-e54d27231729
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