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      100ps time resolution with thin silicon pixel detectors and a SiGe HBT amplifier

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          Abstract

          A 100um thick silicon detector with 1mm2 pad readout optimized for sub-nanosecond time resolution has been developed and tested. Coupled to a purposely developed amplifier based on SiGe HBT technology, this detector was characterized at the H8 beam line at the CERN SPS. An excellent time resolution of (106+-1)ps for silicon detectors was measured with minimum ionizing particles.

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          Development of multi-layer crystal detector and related front end electronics

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            Author and article information

            Journal
            2015-11-13
            Article
            10.1088/1748-0221/11/03/P03011
            1511.04231
            07534b3e-6ef6-4d2c-9be8-d08278f4f249

            http://arxiv.org/licenses/nonexclusive-distrib/1.0/

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            Custom metadata
            physics.ins-det

            Technical & Applied physics
            Technical & Applied physics

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