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CMOS-compatible GaN-on-Si HEMTs with cut-off frequency of 210 GHz and high Johnson’s figure-of-merit of 8.8 THz V
Author(s):
Hanlin Xie
,
Zhihong Liu
,
Yu Gao
,
Kumud Ranjan
,
Kenneth E. Lee
,
Geok Ing Ng
,
H Xie
,
Z LIU
,
Y. GAO
,
K Ranjan
,
KE LEE
,
GI Ng
Publication date:
2020
Journal:
Appl. Phys. Express
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DOI::
10.7567/1882-0786/ab659f
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