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      Hot-Electron Recombination at Neutral Acceptors in GaAs: A cw Probe of Femtosecond Intervalley Scattering

      Author(s): , ,
      Publication date (Electronic):
      Journal: Physical Review Letters
      Publisher: American Physical Society (APS)

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          Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV

          D. Aspnes, A Studna (1983)
          Article 0 comments Cited 882 times – based on 0 reviews     Review now
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            Monte Carlo determination of electron transport properties in gallium arsenide

            W. Fawcett, A.D. Boardman, S. Swain (1970)
            Article 0 comments Cited 229 times – based on 0 reviews     Review now
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              Spherical Model of Shallow Acceptor States in Semiconductors

              A. Baldereschi, Nunzio Lipari (1973)
              Article 0 comments Cited 223 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Journal ID (publisher-id): PRLTAO
                Title: Physical Review Letters
                Abbreviated Title: Phys. Rev. Lett.
                Publisher: American Physical Society (APS)
                ISSN (Print): 0031-9007
                Publication date Created: February 1989
                Publication date (Electronic): February 20 1989
                Volume: 62
                Issue: 8
                Pages: 949-952
                Article
                DOI: 10.1103/PhysRevLett.62.949
                SO-VID: 06664265-cf7b-47f2-87cb-99be811ce9ac
                Copyright © © 1989
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                http://link.aps.org/licenses/aps-default-license

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