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      Structural characterization of nonpolar (112̄0) a-plane GaN thin films grown on (11̄02) r-plane sapphire

      Author(s): , , , ,
      Publication date Created:
      Publication date (Print):
      Journal: Applied Physics Letters
      Publisher: AIP Publishing

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          Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

          O. Ambacher, J. Smart, J. Shealy … (1999)
          Article 0 comments Cited 450 times – based on 0 reviews     Review now
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            Reduction of oscillator strength due to piezoelectric fields inGaN/AlxGa1−xNquantum wells

            A Hangleiter, H. Kollmer, J Off … (1998)
            Article 0 comments Cited 182 times – based on 0 reviews     Review now
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              Role of threading dislocation structure on the x‐ray diffraction peak widths in epitaxial GaN films

              S. Keller, B. Heying, S. DenBaars … (1996)
              Article 0 comments Cited 165 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: Applied Physics Letters
                Abbreviated Title: Appl. Phys. Lett.
                Publisher: AIP Publishing
                ISSN (Print): 0003-6951
                ISSN (Electronic): 1077-3118
                Publication date Created: July 15 2002
                Publication date (Print): July 15 2002
                Volume: 81
                Issue: 3
                Pages: 469-471
                Article
                DOI: 10.1063/1.1493220
                SO-VID: 0732028a-97b8-4d1c-a88b-e543b3b74f79
                Copyright © © 2002
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