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      Effects of ambients on oxygen precipitation in silicon

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      Journal: Applied Physics Letters
      Publisher: AIP Publishing

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          Formation of stacking faults and enhanced diffusion in the oxidation of silicon

          S. M. Hu (1974)
          Article 0 comments Cited 132 times – based on 0 reviews     Review now
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            Oxygen Content of Silicon Single Crystals

            W. Kaiser, P. Keck (1957)
            Article 0 comments Cited 85 times – based on 0 reviews     Review now
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              Characterization of structural defects in annealed silicon containing oxygen

              J R Patel, A. Staudinger, D. M. Maher (1976)
              Article 0 comments Cited 54 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: Applied Physics Letters
                Abbreviated Title: Appl. Phys. Lett.
                Publisher: AIP Publishing
                ISSN (Print): 0003-6951
                ISSN (Electronic): 1077-3118
                Publication date Created: April 1980
                Publication date (Print): April 1980
                Volume: 36
                Issue: 7
                Pages: 561-564
                Article
                DOI: 10.1063/1.91546
                SO-VID: 0ae98417-8348-4e94-bf52-3f000a7a966a
                Copyright © © 1980
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