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      Formation of stacking faults and enhanced diffusion in the oxidation of silicon

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      Journal: Journal of Applied Physics
      Publisher: AIP Publishing

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          General Relationship for the Thermal Oxidation of Silicon

          B. E. Deal, A. S. Grove (1965)
          Article 0 comments Cited 529 times – based on 0 reviews     Review now
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            Diffusion Mechanisms and Point Defects in Silicon and Germanium

            A. Seeger, K. Chik (1968)
            Article 0 comments Cited 139 times – based on 0 reviews     Review now
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              DENSITY OF SiO2–Si INTERFACE STATES

              Peter Gray, Dale M. Brown (1966)
              Article 0 comments Cited 116 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: Journal of Applied Physics
                Abbreviated Title: Journal of Applied Physics
                Publisher: AIP Publishing
                ISSN (Print): 0021-8979
                ISSN (Electronic): 1089-7550
                Publication date Created: April 1974
                Publication date (Print): April 1974
                Volume: 45
                Issue: 4
                Pages: 1567-1573
                Article
                DOI: 10.1063/1.1663459
                SO-VID: b55ecd46-e337-4066-abc4-92f57caa5820
                Copyright © © 1974
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