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      Oxygen diffusion and thermal donor formation in silicon

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      Applied Physics A Solids and Surfaces
      Springer Nature

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          Most cited references11

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          Electrical and infrared spectroscopic investigations of oxygen-related donors in silicon

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            Atomic modelling of homogeneous nucleation of dislocations from condensation of point defects in silicon

            T. Y. Tan (2006)
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              Precipitation of oxygen in dislocation-free silicon

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                Author and article information

                Journal
                Applied Physics A Solids and Surfaces
                Appl. Phys. A
                Springer Nature
                0721-7250
                1432-0630
                June 1982
                June 1982
                : 28
                : 2
                : 79-92
                Article
                10.1007/BF00617135
                0e04b75a-1163-41d8-b0b4-2d73ac6c5f36
                © 1982
                History

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