Structure and transformation of the metastable boron- and oxygen-related defect center in crystalline silicon

Bothe, Karsten; Schmidt, Jan

doi:10.1103/PhysRevB.69.024107

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Structure and transformation of the metastable boron- and oxygen-related defect center in crystalline silicon

Author(s): Jan Schmidt , Karsten Bothe

Publication date (Electronic): January 22 2004

Journal: Physical Review B

Publisher: American Physical Society (APS)

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Contactless determination of current–voltage characteristics and minority‐carrier lifetimes in semiconductors from quasi‐steady‐state photoconductance data

Andrés Cuevas, Ronald A. Sinton (1996)

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Theory of recombination-enhanced defect reactions in semiconductors

John C. Tully, John D. Weeks, L. Kimerling (1975)

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Oxygen diffusion and thermal donor formation in silicon

U. G�sele, T. Y. Tan (1982)

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Journal ID (publisher-id): PRBMDO

Title: Physical Review B

Abbreviated Title: Phys. Rev. B

Publisher: American Physical Society (APS)

ISSN (Print): 1098-0121

ISSN (Electronic): 1550-235X

Publication date Created: January 2004

Publication date (Electronic): January 22 2004

Volume: 69

Issue: 2

Article

DOI: 10.1103/PhysRevB.69.024107

SO-VID: 8dddc85a-6db1-46ec-ade7-807c7ee6577e

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Structure and transformation of the metastable boron- and oxygen-related defect center in crystalline silicon

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Most cited references 17

Contactless determination of current–voltage characteristics and minority‐carrier lifetimes in semiconductors from quasi‐steady‐state photoconductance data

Theory of recombination-enhanced defect reactions in semiconductors

Oxygen diffusion and thermal donor formation in silicon

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