SINIS process development for integrated circuits with characteristic voltages exceeding 250 μV

Balashov, D.; Khabipov, M.; Buchholz, F.-I.; Niemeyer, J

doi:10.1109/77.919532

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SINIS process development for integrated circuits with characteristic voltages exceeding 250 μV

Author(s): D. Balashov , M. Khabipov , F.-I. Buchholz , J. Niemeyer

Publication date (Print): March 2001

Journal: IEEE Transactions on Appiled Superconductivity

Publisher: Institute of Electrical and Electronics Engineers (IEEE)

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Title: IEEE Transactions on Appiled Superconductivity

Abbreviated Title: IEEE Trans. Appl. Supercond.

Publisher: Institute of Electrical and Electronics Engineers (IEEE)

ISSN (Print): 10518223

Publication date (Print): March 2001

Volume: 11

Issue: 1

Pages: 1070-1073

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DOI: 10.1109/77.919532

SO-VID: 0fa6f80c-3594-4df0-ae76-729ac6d472e6

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SINIS process development for integrated circuits with characteristic voltages exceeding 250 μV

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