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      Electronic properties of semiconducting FeSi2films

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      Journal of Applied Physics
      AIP Publishing

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          Interband critical points of GaAs and their temperature dependence

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            Refractory silicides for integrated circuits

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              Direct measurement of gap-state absorption in hydrogenated amorphous silicon by photothermal deflection spectroscopy

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                Author and article information

                Journal
                Journal of Applied Physics
                Journal of Applied Physics
                AIP Publishing
                0021-8979
                1089-7550
                August 15 1990
                August 15 1990
                : 68
                : 4
                : 1726-1734
                Article
                10.1063/1.346601
                110d0988-7442-47dc-8e9f-659d5e57dbb1
                © 1990
                History

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