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      Powering AI at the edge: A robust, memristor-based binarized neural network with near-memory computing and miniaturized solar cell

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          Abstract

          Memristor-based neural networks provide an exceptional energy-efficient platform for artificial intelligence (AI), presenting the possibility of self-powered operation when paired with energy harvesters. However, most memristor-based networks rely on analog in-memory computing, necessitating a stable and precise power supply, which is incompatible with the inherently unstable and unreliable energy harvesters. In this work, we fabricated a robust binarized neural network comprising 32,768 memristors, powered by a miniature wide-bandgap solar cell optimized for edge applications. Our circuit employs a resilient digital near-memory computing approach, featuring complementarily programmed memristors and logic-in-sense-amplifier. This design eliminates the need for compensation or calibration, operating effectively under diverse conditions. Under high illumination, the circuit achieves inference performance comparable to that of a lab bench power supply. In low illumination scenarios, it remains functional with slightly reduced accuracy, seamlessly transitioning to an approximate computing mode. Through image classification neural network simulations, we demonstrate that misclassified images under low illumination are primarily difficult-to-classify cases. Our approach lays the groundwork for self-powered AI and the creation of intelligent sensors for various applications in health, safety, and environment monitoring.

          Abstract

          The authors present an AI engine with 32,768 memristors powered by a miniature solar cell. This circuit exploits near-memory computing, naturally adjusting its accuracy depending on the illumination level, and paves the way for self-powered AI.

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          Most cited references27

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          Gradient-based learning applied to document recognition

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            Training and operation of an integrated neuromorphic network based on metal-oxide memristors

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              In-memory computing with resistive switching devices

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                Author and article information

                Contributors
                damien.querlioz@c2n.upsaclay.fr
                jean-michel.portal@univ-amu.fr
                Journal
                Nat Commun
                Nat Commun
                Nature Communications
                Nature Publishing Group UK (London )
                2041-1723
                25 January 2024
                25 January 2024
                2024
                : 15
                : 741
                Affiliations
                [1 ]GRID grid.496914.7, ISNI 0000 0004 0385 8635, Aix-Marseille Université, CNRS, , Institut Matériaux Microélectronique Nanosciences de Provence, ; Marseille, France
                [2 ]GRID grid.503099.6, Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, ; Palaiseau, France
                [3 ]GRID grid.457348.9, ISNI 0000 0004 0630 1517, Université Grenoble Alpes, CEA, LETI, ; Grenoble, France
                [4 ]Institut Photovoltaïque d’Ile-de-France (IPVF), ( https://ror.org/052jxdr90) Palaiseau, France
                Author information
                http://orcid.org/0000-0002-8868-9951
                http://orcid.org/0000-0001-6176-1653
                http://orcid.org/0000-0002-0295-1008
                Article
                44766
                10.1038/s41467-024-44766-6
                10811339
                38272896
                14e67f67-5d96-40dd-9d9e-b71396e6ea8c
                © The Author(s) 2024

                Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

                History
                : 5 May 2023
                : 4 January 2024
                Funding
                Funded by: FundRef 100010663, EC | EU Framework Programme for Research and Innovation H2020 | H2020 Priority Excellent Science | H2020 European Research Council (H2020 Excellent Science - European Research Council);
                Award ID: 715872
                Funded by: FundRef 501100001665, Agence Nationale de la Recherche (French National Research Agency);
                Award ID: ANR-18-CE24-0009
                Funded by: FundRef 501100001665, Agence Nationale de la Recherche (French National Research Agency);
                Award ID: ANR-22-PEEL-0010
                Categories
                Article
                Custom metadata
                © Springer Nature Limited 2024

                Uncategorized
                electrical and electronic engineering,electronic devices
                Uncategorized
                electrical and electronic engineering, electronic devices

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