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      Implementing P-Channel Junctionless Thin-Film Transistor on Poly-Ge0.95Sn0.05 Film Formed by Amorphous GeSn Deposition and Annealing

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          Modified Scherrer Equation to Estimate More Accurately Nano-Crystallite Size Using XRD

          Ahmad Monshi, Mohammad Foroughi, Mohammad Monshi (2012)
          Article 0 comments Cited 233 times – based on 0 reviews     Review now
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            Recent Advances on Nitrous Oxide (N2O) Decomposition over Non-Noble-Metal Oxide Catalysts: Catalytic Performance, Mechanistic Considerations, and Surface Chemistry Aspects

            Michalis Konsolakis (2015)
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              GeSn technology: Extending the Ge electronics roadmap

              Aneesh Nainani, James S Harris, Yoshio Nishi … (2011)
              Article 0 comments Cited 24 times – based on 0 reviews
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                Author and article information

                Journal
                Title: IEEE Electron Device Letters
                Abbreviated Title: IEEE Electron Device Lett.
                Publisher: Institute of Electrical and Electronics Engineers (IEEE)
                ISSN (Print): 0741-3106
                ISSN (Electronic): 1558-0563
                Publication date Created: August 2018
                Publication date (Print): August 2018
                Volume: 39
                Issue: 8
                Pages: 1187-1190
                Article
                DOI: 10.1109/LED.2018.2846882
                SO-VID: 18ba8110-06e3-4332-b13d-1ef413f9a653
                Copyright © © 2018
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