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      Influence of an undoped (AlGa)As spacer on mobility enhancement in GaAs‐(AlGa)As superlattices

      , , ,
      Applied Physics Letters
      AIP Publishing

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          Electron mobilities in modulation‐doped semiconductor heterojunction superlattices

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            A New Field-Effect Transistor with Selectively Doped GaAs/n-AlxGa1-xAs Heterojunctions

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              Two-dimensional electron gas at a semiconductor-semiconductor interface

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                Author and article information

                Journal
                Applied Physics Letters
                Appl. Phys. Lett.
                AIP Publishing
                0003-6951
                1077-3118
                May 1981
                May 1981
                : 38
                : 9
                : 691-693
                Article
                10.1063/1.92481
                1f29f1e7-8422-4bc5-af92-f4430ff1a883
                © 1981
                History

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