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      Intersubband electroluminescence from Si/SiGe cascade emitters at terahertz frequencies

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          Gas sensing using terahertz time-domain spectroscopy

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            Intersubband electroluminescence from silicon-based quantum cascade structures.

            The quantum cascade laser, which uses electronic transitions within a single band of a semiconductor, constitutes a possible way to integrate active optical components into silicon-based technology. This concept necessitates a transition with a narrow linewidth and an upper state with a sufficiently long lifetime. We report the observation of intersubband electroluminescence from a p-type silicon/silicon-germanium quantum cascade structure, centered at 130 millielectron volts with a width of 22 millielectron volts, with the expected polarization, and discernible up to 180 kelvin. The nonradiative lifetime is found to depend strongly on the design of the quantum well structure, and is shown to reach values comparable to that of an equivalent GaInAs/AlInAs laser structure.
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              Far-infrared (λ=88 μm) electroluminescence in a quantum cascade structure

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                Author and article information

                Journal
                Applied Physics Letters
                Appl. Phys. Lett.
                AIP Publishing
                0003-6951
                1077-3118
                August 26 2002
                August 26 2002
                : 81
                : 9
                : 1543-1545
                Article
                10.1063/1.1501759
                21ad24b6-70d9-4ac6-abdb-1b431ce11461
                © 2002
                History

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