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      Raman Measurement of Lattice Temperature during Pulsed Laser Heating of Silicon

      Author(s): ,
      Publication date (Print):
      Journal: Physical Review Letters
      Publisher: American Physical Society (APS)

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          Intrinsic Optical Absorption in Single-Crystal Germanium and Silicon at 77°K and 300°K

          W. Dash, R. Newman (1955)
          Article 0 comments Cited 308 times – based on 0 reviews     Review now
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            Theory of the First-Order Raman Effect in Crystals

            R. Loudon (1963)
            Article 0 comments Cited 129 times – based on 0 reviews     Review now
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              Time‐resolved reflectivity of ion‐implanted silicon during laser annealing

              D. H. Auston, J A Golovchenko, R E Slusher … (1978)
              Article 0 comments Cited 106 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Journal ID (publisher-id): PRLTAO
                Title: Physical Review Letters
                Abbreviated Title: Phys. Rev. Lett.
                Publisher: American Physical Society (APS)
                ISSN (Print): 0031-9007
                Publication date Created: June 1980
                Publication date (Print): June 16 1980
                Volume: 44
                Issue: 24
                Pages: 1604-1607
                Article
                DOI: 10.1103/PhysRevLett.44.1604
                SO-VID: 22206c07-6212-40a4-a3cd-e28f1bec24bf
                Copyright © © 1980
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                http://link.aps.org/licenses/aps-default-license

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