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      Time‐resolved reflectivity of ion‐implanted silicon during laser annealing

      Author(s): , , , ,
      Publication date Created:
      Publication date (Print):
      Journal: Applied Physics Letters
      Publisher: AIP Publishing

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          Spatially controlled crystal regrowth of ion‐implanted silicon by laser irradiation

          L. Kimerling, J. Poate, G. K. Celler (1978)
          Article 0 comments Cited 82 times – based on 0 reviews     Review now
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            Thermal Conductivity, Electrical Resistivity, and Seebeck Coefficient of Silicon from 100 to 1300°K

            D. L. McElroy, R Williams, R GRAVES … (1968)
            Article 0 comments Cited 71 times – based on 0 reviews     Review now
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              Dose dependence in the laser annealing of arsenic‐implanted silicon

              P. Cowan, J. Poate, J A Golovchenko … (1978)
              Article 0 comments Cited 17 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: Applied Physics Letters
                Abbreviated Title: Appl. Phys. Lett.
                Publisher: AIP Publishing
                ISSN (Print): 0003-6951
                ISSN (Electronic): 1077-3118
                Publication date Created: September 1978
                Publication date (Print): September 1978
                Volume: 33
                Issue: 5
                Pages: 437-440
                Article
                DOI: 10.1063/1.90369
                SO-VID: 323bfb7d-1ba3-4b18-9c36-a8359f7ece2c
                Copyright © © 1978
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