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      Photo-Response of Functionalized Self-Assembled Graphene Oxide on Zinc Oxide Heterostructure to UV Illumination

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          Abstract

          Convective assembly technique which is a simple and scalable method was used for coating uniform graphene oxide (GO) nanosheets on zinc oxide (ZnO) thin films. Upon UV irradiation, an enhancement in the on-off ratio was observed after functionalizing ZnO films by GO nanosheets. The calculations of on-off ratio, the device responsivity, and the external quantum efficiency were investigated and implied that the GO layer provides a stable pathway for electron transport. Structural investigations of the assembled GO and the heterostructure of GO on ZnO were performed using scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), and Fourier transform infrared spectroscopy (FTIR). The covered GO layer has a wide continuous area, with wrinkles and folds at the edges. In addition, the phonon lattice vibrations were investigated by Raman analysis. For GO and the heterostructure, a little change in the ratio between the D-band and G-band was found which means that no additional defects were formed within the heterostructure.

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          Most cited references46

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          Electric Field Effect in Atomically Thin Carbon Films

          We report a naturally-occurring two-dimensional material (graphene that can be viewed as a gigantic flat fullerene molecule, describe its electronic properties and demonstrate all-metallic field-effect transistor, which uniquely exhibits ballistic transport at submicron distances even at room temperature.
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            Giant intrinsic carrier mobilities in graphene and its bilayer.

            We have studied temperature dependences of electron transport in graphene and its bilayer and found extremely low electron-phonon scattering rates that set the fundamental limit on possible charge carrier mobilities at room temperature. Our measurements show that mobilities higher than 200 000 cm2/V s are achievable, if extrinsic disorder is eliminated. A sharp (thresholdlike) increase in resistivity observed above approximately 200 K is unexpected but can qualitatively be understood within a model of a rippled graphene sheet in which scattering occurs on intraripple flexural phonons.
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              Ultrafast graphene photodetector

              The electronic properties of graphene are unique and are attracting increased attention to this novel 2-dimensional system. Its photonic properties are not less impressive. For example, this single atomic layer absorbs through direct interband transitions a considerable fraction of the light (~2.3%) over a very a broad wavelength range. However, while applications in electronics are vigorously being pursued, photonic applications have not attracted as much attention. Here, we report on ultrafast photocurrent response measurements in graphene (single and few-layers) field-effect-transistors (FETs) up to 40 GHz light intensity modulation frequencies, using a 1.55 micron excitation laser. No photoresponse degradation is observable up to the highest measured frequency, demonstrating the feasibility and unique benefits of using graphene in photonics. Further analysis suggests that the intrinsic bandwidth of such graphene FET based photodetectors may exceed 500 GHz. Most notably, the generation and transport of the photo-carriers in such graphene photodetectors are fundamentally different from those in currently known semiconductor photodetectors, leading to a remarkably high bandwidth, zero source-drain bias (hence zero dark current) operation, and good internal quantum efficiency.
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                Author and article information

                Contributors
                alynabieh@yahoo.com
                Journal
                Nanoscale Res Lett
                Nanoscale Res Lett
                Nanoscale Research Letters
                Springer US (New York )
                1931-7573
                1556-276X
                12 January 2016
                12 January 2016
                2016
                : 11
                : 13
                Affiliations
                [ ]Physics Department, Faculty of Science, Suez Canal University, Ismailia, 41522 Egypt
                [ ]Recruitment Department, University of Hail, Hail, 2440 Kingdom of Saudi Arabia
                [ ]Basic Science Department, Faculty of Industrial Education, Helwan University, Cairo, Egypt
                [ ]Department of Basic Science, Higher Technological Institute, 10th of Ramadan City, Egypt
                Article
                1221
                10.1186/s11671-015-1221-8
                4709344
                26754939
                24e89d95-899c-4ffb-b738-404c85e50565
                © Fouda et al. 2016

                Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License ( http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.

                History
                : 15 October 2015
                : 27 December 2015
                Categories
                Nano Commentary
                Custom metadata
                © The Author(s) 2016

                Nanomaterials
                structure modeling,graphene oxide on zno,self-assembly,raman analysis
                Nanomaterials
                structure modeling, graphene oxide on zno, self-assembly, raman analysis

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