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      Lattice Location by Channeling Angular Distributions: Bi Implanted in Si

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      Physical Review B
      American Physical Society (APS)

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          Monte Carlo Channeling Calculations

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            Implantation and Annealing Behavior of Group III and V Dopants in Silicon as Studied by the Channeling Technique

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              Vibrational Amplitudes in Germanium and Silicon

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                Author and article information

                Journal
                PRBMDO
                Physical Review B
                Phys. Rev. B
                American Physical Society (APS)
                0556-2805
                August 1972
                August 15 1972
                : 6
                : 4
                : 1382-1394
                Article
                10.1103/PhysRevB.6.1382
                25401f01-a17b-4e45-9d70-bc45908d1c9b
                © 1972

                http://link.aps.org/licenses/aps-default-license

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