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      Supersaturated substitutional alloys formed by ion implantation and pulsed laser annealing of group‐III and group‐V dopants in silicon

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      Journal of Applied Physics
      AIP Publishing

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          Range and stopping-power tables for heavy ions

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            Solid Solubilities of Impurity Elements in Germanium and Silicon*

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              Time‐resolved reflectivity of ion‐implanted silicon during laser annealing

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                Author and article information

                Journal
                Journal of Applied Physics
                Journal of Applied Physics
                AIP Publishing
                0021-8979
                1089-7550
                January 1980
                January 1980
                : 51
                : 1
                : 738-749
                Article
                10.1063/1.327334
                11fcc18b-4bc9-4894-bef2-a6ade79b9db9
                © 1980
                History

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