Analysis of reverse-bias leakage current mechanisms in GaN grown by molecular-beam epitaxy

Speck, J. S.; Waltereit, P.; Yu, E. T.; Miller, E J

doi:10.1063/1.1644029

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Analysis of reverse-bias leakage current mechanisms in GaN grown by molecular-beam epitaxy

Author(s): E. J. Miller , E. T. Yu , P. Waltereit , J. S. Speck

Publication date Created: January 26 2004

Publication date (Print): January 26 2004

Journal: Applied Physics Letters

Publisher: AIP Publishing

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AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates

R. Gaska, M. Shur, X. Hu … (2000)

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Inhomogeneous spatial distribution of reverse bias leakage in GaN Schottky diodes

R. Molnar, J. Hsu, M. J. Manfra … (2001)

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Optimization of the surface morphologies and electron mobilities in GaN grown by plasma-assisted molecular beam epitaxy

C. Elsass, P. Fini, S. Den Baars … (2000)

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Journal

Title: Applied Physics Letters

Abbreviated Title: Appl. Phys. Lett.

Publisher: AIP Publishing

ISSN (Print): 0003-6951

ISSN (Electronic): 1077-3118

Publication date Created: January 26 2004

Publication date (Print): January 26 2004

Volume: 84

Issue: 4

Pages: 535-537

Article

DOI: 10.1063/1.1644029

SO-VID: 28c9475a-b099-4363-8017-93a955856bd1

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Analysis of reverse-bias leakage current mechanisms in GaN grown by molecular-beam epitaxy

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Core Readings in Statistical Mediation Analysis

Most cited references 20

AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates

Inhomogeneous spatial distribution of reverse bias leakage in GaN Schottky diodes

Optimization of the surface morphologies and electron mobilities in GaN grown by plasma-assisted molecular beam epitaxy

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