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      Optimization of the surface morphologies and electron mobilities in GaN grown by plasma-assisted molecular beam epitaxy

      Author(s): , , , , , , ,
      Publication date Created:
      Publication date (Print):
      Journal: Applied Physics Letters
      Publisher: AIP Publishing

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          Scattering of electrons at threading dislocations in GaN

          Dharanipal Doppalapudi, Nils G. Weimann, Theodore Moustakas … (1998)
          Article 0 comments Cited 156 times – based on 0 reviews     Review now
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            Dislocation Scattering in GaN

            D. Look, J. Sizelove (1999)
            Article 0 comments Cited 136 times – based on 0 reviews     Review now
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              Control of GaN surface morphologies using plasma-assisted molecular beam epitaxy

              B. Heying, J. S. Speck, E Haus … (2000)
              Article 0 comments Cited 131 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: Applied Physics Letters
                Abbreviated Title: Appl. Phys. Lett.
                Publisher: AIP Publishing
                ISSN (Print): 0003-6951
                ISSN (Electronic): 1077-3118
                Publication date Created: October 30 2000
                Publication date (Print): October 30 2000
                Volume: 77
                Issue: 18
                Pages: 2885-2887
                Article
                DOI: 10.1063/1.1322370
                SO-VID: 76d25b5f-47b1-40de-b259-1783639e9792
                Copyright © © 2000
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