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      Hardware Implementation of Network Connectivity Relationships Using 2D hBN‐Based Artificial Neuron and Synaptic Devices

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          Abstract

          Brain‐inspired neuromorphic computing has been developed as a potential candidate for solving the von Neumann bottleneck of traditional computing systems. 2D materials‐based memristors have been exponentially investigated as promising building blocks of neuromorphic computing because of their excellent electrical performance, simple structure, and small device scale. However, while many researchers have focused on looking into individual artificial neuromorphic devices based on memristors, only few studies on the integration of artificial neuron and synaptic devices have been reported. In this work, both volatile and nonvolatile memristors are fabricated by using a 2D hexagonal boron nitride film for artificial neuron and synaptic devices, respectively. The leaky‐integrate‐and‐fire neuron performance and synaptic functions (e.g., synaptic weight plasticity and spike‐timing‐dependent plasticity) are well emulated with the fabricated volatile and nonvolatile devices. The MNIST image classification is conducted based on the experimental data. For the first time, an artificial neuron‐synapse‐neuron neural network is physically constructed using the artificial neuron and synaptic devices to mimic the biological neural networks. The synaptic connection strength modulation is experimentally demonstrated between the neurons depending on the conductance state of the synapse, paving the way for the development of large‐scale neural network hardware.

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          Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing

          Calcium ions play a vital role in enabling synaptic plasticity in biological systems. The dynamic behaviour of these ions has now been emulated in a metal atom diffusion-based memristor.
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            The future of electronics based on memristive systems

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              Memristive crossbar arrays for brain-inspired computing

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                Author and article information

                Contributors
                Journal
                Advanced Functional Materials
                Adv Funct Materials
                Wiley
                1616-301X
                1616-3028
                November 05 2023
                Affiliations
                [1 ] Center for Neuromorphic Engineering Korea Institute of Science and Technology (KIST) 5 Hwarang‐ro 14‐gil, Seongbuk‐gu Seoul 02792 Republic of Korea
                [2 ] Division of Nanoscience and Technology Korea University of Science and Technology (UST) 217 Gajeong‐ro, Yuseong‐gu Daejeon 34113 Republic of Korea
                Article
                10.1002/adfm.202309058
                2eb1a417-d739-4364-b626-09061b88b4a8
                © 2023

                http://creativecommons.org/licenses/by-nc-nd/4.0/

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