Scalable high performance radio frequency electronics based on large domain bilayer MoS ₂

Abstract

Atomically-thin layered molybdenum disulfide (MoS ₂) has attracted tremendous research attention for their potential applications in high performance DC and radio frequency electronics, especially for flexible electronics. Bilayer MoS ₂ is expected to have higher electron mobility and higher density of states with higher performance compared with single layer MoS ₂. Here, we systematically investigate the synthesis of high quality bilayer MoS ₂ by chemical vapor deposition on molten glass with increasing domain sizes up to 200 μm. High performance transistors with optimized high- κ dielectrics deliver ON-current of 427 μA μm ⁻¹ at 300 K and a record high ON-current of 1.52 mA μm ⁻¹ at 4.3 K. Moreover, radio frequency transistors are demonstrated with an extrinsic high cut-off frequency of 7.2 GHz and record high extrinsic maximum frequency of oscillation of 23 GHz, together with gigahertz MoS ₂ mixers on flexible polyimide substrate, showing the great potential for future high performance DC and high-frequency electronics.

Abstract

Large area two-dimensional materials show promise for applications in DC and RF flexible electronics. Here, the authors report RF transistors based on chemical vapor deposited bilayer MoS ₂ with 23 GHz extrinsic maximum oscillation frequency, and gigahertz mixers on flexible polyimide substrates.