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Nitrogen donors and deep levels in high‐quality 4H–SiC epilayers grown by chemical vapor deposition
T. Kimoto ,
A. Itoh ,
H. Matsunami ,
S. Sridhara ,
L. L. Clemen ,
R. P. Devaty ,
W. J. Choyke ,
T. Dalibor ,
C. Peppermüller ,
G. Pensl
November 06 1995
November 06 1995
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