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      Dynamic layer rearrangement during growth of layered oxide films by molecular beam epitaxy

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          Abstract

          The A(n+1)B(n)O(3n+1) Ruddlesden-Popper homologous series offers a wide variety of functionalities including dielectric, ferroelectric, magnetic and catalytic properties. Unfortunately, the synthesis of such layered oxides has been a major challenge owing to the occurrence of growth defects that result in poor materials behaviour in the higher-order members. To understand the fundamental physics of layered oxide growth, we have developed an oxide molecular beam epitaxy system with in situ synchrotron X-ray scattering capability. We present results demonstrating that layered oxide films can dynamically rearrange during growth, leading to structures that are highly unexpected on the basis of the intended layer sequencing. Theoretical calculations indicate that rearrangement can occur in many layered oxide systems and suggest a general approach that may be essential for the construction of metastable Ruddlesden-Popper phases. We demonstrate the utility of the new-found growth strategy by performing the first atomically controlled synthesis of single-crystalline La3Ni2O7.

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          Efficient iterative schemes forab initiototal-energy calculations using a plane-wave basis set

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            Quasi-ideal strontium titanate crystal surfaces through formation of strontium hydroxide

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              New compounds of the K2NIF4type

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                Author and article information

                Journal
                Nature Materials
                Nature Mater
                Springer Science and Business Media LLC
                1476-1122
                1476-4660
                September 2014
                August 3 2014
                September 2014
                : 13
                : 9
                : 879-883
                Article
                10.1038/nmat4039
                25087067
                399da426-bac6-45cd-963d-bc1264f026bb
                © 2014

                http://www.springer.com/tdm

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