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Abstract
We have investigated the depletion voltage changes, the leakage current increase and
the charge collection efficiency of a silicon microstrip detector identical to those
used in the inner layers of the BaBar Silicon Vertex Tracker (SVT) after heavy non-uniform
irradiation. A full SVT module with the front-end electronics connected has been irradiated
with a 0.9 GeV electron beam up to a peak fluence of 3.5 x 10^14 e^-/cm^2, well beyond
the level causing substrate type inversion. We irradiated one of the two sensors composing
the module with a non-uniform profile with sigma=1.4 mm that simulates the conditions
encountered in the BaBar experiment by the modules intersecting the horizontal machine
plane. The position dependence of the charge collection properties and the depletion
voltage have been investigated in detail using a 1060 nm LED and an innovative measuring
technique based only on the digital output of the chip.
Comments 7 pages, 13 figures. Presented at the 2004 IEEE Nuclear Science
Symposium, October 18-21, Rome, Italy. Accepted for publication by IEEE
Transactions on Nuclear Science