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      Ga 2Se 3 Defect Semiconductors: The Study of Direct Band Edge and Optical Properties

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      ACS Omega
      American Chemical Society

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          Abstract

          Direct band edge is a crucial factor for a functional chalcogenide to be applied in luminescence devices, photodetectors, and solar-energy devices. In this work, the room-temperature band-edge emission of III–VI Ga 2Se 3 has been first observed by micro-photoluminescence (μPL) measurement. The emission peak is at 1.85 eV, which matches well with the band-edge transition that is measured by micro-thermoreflectance (μTR) and micro-transmittance (μTransmittance) for verification of the direct band edge of Ga 2Se 3. The temperature-dependent μTR spectra of Ga 2Se 3 show a general semiconductor behavior with its temperature-energy shift following Varshni-type variation. With the well-evident direct band edge, the peak responsivities of photovoltaic response (∼6.2 mV/μW) and photocurrent (∼2.25 μA/μW at f = 30 Hz) of defect zincblende Ga 2Se 3 can be, respectively, detected at ∼2.22 and ∼1.92 eV from a Cu/Ga 2Se 3 Schottky solar cell and a Ga 2Se 3 photoconductor. On the basis of experimental analysis, the optical band edge and photoresponsivity properties of a III–VI Ga 2Se 3 defect semiconductor are thus realized.

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          Most cited references52

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          Temperature dependence of the energy gap in semiconductors

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            Two-dimensional flexible nanoelectronics.

            2014/2015 represents the tenth anniversary of modern graphene research. Over this decade, graphene has proven to be attractive for thin-film transistors owing to its remarkable electronic, optical, mechanical and thermal properties. Even its major drawback--zero bandgap--has resulted in something positive: a resurgence of interest in two-dimensional semiconductors, such as dichalcogenides and buckled nanomaterials with sizeable bandgaps. With the discovery of hexagonal boron nitride as an ideal dielectric, the materials are now in place to advance integrated flexible nanoelectronics, which uniquely take advantage of the unmatched portfolio of properties of two-dimensional crystals, beyond the capability of conventional thin films for ubiquitous flexible systems.
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              Synthesis of few-layer GaSe nanosheets for high performance photodetectors.

              Two-dimensional (2D) semiconductor nanomaterials hold great promises for future electronics and optics. In this paper, a 2D nanosheets of ultrathin GaSe has been prepared by using mechanical cleavage and solvent exfoliation method. Single- and few-layer GaSe nanosheets are exfoliated on an SiO(2)/Si substrate and characterized by atomic force microscopy and Raman spectroscopy. Ultrathin GaSe-based photodetector shows a fast response of 0.02 s, high responsivity of 2.8 AW(-1) and high external quantum efficiency of 1367% at 254 nm, indicating that the two-dimensional nanostructure of GaSe is a new promising material for high performance photodetectors.
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                Author and article information

                Journal
                ACS Omega
                ACS Omega
                ao
                acsodf
                ACS Omega
                American Chemical Society
                2470-1343
                15 July 2020
                28 July 2020
                : 5
                : 29
                : 18527-18534
                Affiliations
                [1]Graduate Institute of Applied Science and Technology, National Taiwan University of Science and Technology , Taipei 106, Taiwan
                Author notes
                [* ]Email: chho@ 123456mail.ntust.edu.tw . Tel: +886-2-27303772. Fax: +886-2-27303733.
                Article
                10.1021/acsomega.0c02623
                7392520
                3d26dd73-002b-4ef3-9e15-7954713461bb
                Copyright © 2020 American Chemical Society

                This is an open access article published under an ACS AuthorChoice License, which permits copying and redistribution of the article or any adaptations for non-commercial purposes.

                History
                : 02 June 2020
                : 06 July 2020
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