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Channeling measurements in As‐doped Si
Author(s):
J. Haskell
,
E. Rimini
,
J.W. Mayer
Publication date
Created:
August 1972
Publication date
(Print):
August 1972
Journal:
Journal of Applied Physics
Publisher:
AIP Publishing
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15
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ION IMPLANTATION OF SILICON: I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MeV HELIUM ION SCATTERING
L Eriksson
,
J. Denhartog
,
J. Davies
…
(1967)
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Implantation and Annealing Behavior of Group III and V Dopants in Silicon as Studied by the Channeling Technique
N. Johansson
,
J. Davies
,
J. Mayer
…
(1969)
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Arsenic Clustering in Silicon
R. Schwenker
,
R. Lever
,
E. Pan
(1971)
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Author and article information
Journal
Title:
Journal of Applied Physics
Abbreviated Title:
Journal of Applied Physics
Publisher:
AIP Publishing
ISSN (Print):
0021-8979
ISSN (Electronic):
1089-7550
Publication date Created:
August 1972
Publication date (Print):
August 1972
Volume
: 43
Issue
: 8
Pages
: 3425-3431
Article
DOI:
10.1063/1.1661732
SO-VID:
40503242-8505-4bae-a88b-93cad16f81dd
Copyright ©
© 1972
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