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      Electronic structure of InP/\({\mathrm{Ga}}_{0.47}\)\({\mathrm{In}}_{0.53}\)As interfaces

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          Self-energy operators and exchange-correlation potentials in semiconductors

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            Ab initiostatic dielectric matrices from the density-functional approach. I. Formulation and application to semiconductors and insulators

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              Band offsets in lattice-matched heterojunctions: A model and first-principles calculations for GaAs/AlAs.

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                Author and article information

                Journal
                PRBMDO
                Physical Review B
                Phys. Rev. B
                American Physical Society (APS)
                0163-1829
                1095-3795
                June 1990
                June 15 1990
                : 41
                : 17
                : 12106-12110
                Article
                10.1103/PhysRevB.41.12106
                410d5a91-65fe-42ae-bc78-9381e33ebf3e
                © 1990

                http://link.aps.org/licenses/aps-default-license

                History

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