ScienceOpen:
research and publishing network
For Publishers
Discovery
Metadata
Peer review
Hosting
Publishing
For Researchers
Join
Publish
Review
Collect
My ScienceOpen
Sign in
Register
Dashboard
Blog
About
Search
Advanced search
My ScienceOpen
Sign in
Register
Dashboard
Search
Search
Advanced search
For Publishers
Discovery
Metadata
Peer review
Hosting
Publishing
For Researchers
Join
Publish
Review
Collect
Blog
About
5
views
24
references
Top references
cited by
26
Cite as...
0 reviews
Review
0
comments
Comment
0
recommends
+1
Recommend
0
collections
Add to
0
shares
Share
Twitter
Sina Weibo
Facebook
Email
1,772
similar
All similar
Record
: found
Abstract
: not found
Article
: not found
Band offset transitivity at the InGaAs/InAlAs/InP(001) heterointerfaces
Author(s):
Mark S. Hybertsen
Publication date
Created:
April 22 1991
Publication date
(Print):
April 22 1991
Journal:
Applied Physics Letters
Publisher:
AIP Publishing
Read this article at
ScienceOpen
Publisher
Review
Review article
Invite someone to review
Bookmark
Cite as...
There is no author summary for this article yet. Authors can add summaries to their articles on ScienceOpen to make them more accessible to a non-specialist audience.
Related collections
ScienceOpen Research
Most cited references
24
Record
: found
Abstract
: not found
Article
: not found
Acoustic deformation potentials and heterostructure band offsets in semiconductors
Manuel Cardona
,
Niels E. Christensen
(1987)
0
comments
Cited
221
times
– based on
0
reviews
Review now
Bookmark
Record
: found
Abstract
: not found
Article
: not found
Theoretical study of band offsets at semiconductor interfaces
Chris Van de Walle
,
Richard M. Martin
(1987)
0
comments
Cited
175
times
– based on
0
reviews
Review now
Bookmark
Record
: found
Abstract
: not found
Article
: not found
Measurement of the conduction‐band discontinuity of molecular beam epitaxial grown In0.52Al0.48As/In0.53Ga0.47As,N‐nheterojunction byC‐Vprofiling
R. People
,
A. Y. Cho
,
K. Alavi
…
(1983)
0
comments
Cited
113
times
– based on
0
reviews
Review now
Bookmark
All references
Author and article information
Journal
Title:
Applied Physics Letters
Abbreviated Title:
Appl. Phys. Lett.
Publisher:
AIP Publishing
ISSN (Print):
0003-6951
ISSN (Electronic):
1077-3118
Publication date Created:
April 22 1991
Publication date (Print):
April 22 1991
Volume
: 58
Issue
: 16
Pages
: 1759-1761
Article
DOI:
10.1063/1.105082
SO-VID:
a8ad9478-dcca-4bc9-80de-29dcdb719ca8
Copyright ©
© 1991
History
Data availability:
Comments
Comment on this article
Sign in to comment
scite_
Similar content
1,772
Terahertz-frequency photoconductive detectors fabricated from metal-organic chemical vapor deposition-grown Fe-doped InGaAs
Authors:
C. D. Wood
,
O. Hatem
,
J. Cunningham
…
Terahertz Generation and Detection Using Low Temperature Grown InGaAs-InAlAs Photoconductive Antennas at 1.55 $\mu{\hbox{m}}$ Pulse Excitation
Authors:
Ioannis Kostakis
,
Daryoosh Saeedkia
,
Mohamed Missous
Comprehensive study of interaction between biocompatible PEG-InP/ZnS QDs and bovine serum albumin.
Authors:
M S Sannaikar
,
Laxmi S Inamdar
,
G H Pujar
…
See all similar
Cited by
26
Band parameters for III–V compound semiconductors and their alloys
Authors:
J R Meyer
,
I Vurgaftman
,
L. Ram-Mohan
Band-offset transitivity in strained (001) heterointerfaces
Authors:
C Priester
,
Y. Foulon
Photoluminescence study of the interface in type II InAlAs–InP heterostructures
Authors:
D Vignaud
,
F. Mollot
,
X. Wallart
…
See all cited by
Most referenced authors
394
X Wang
S. Li
Z. Huang
See all reference authors