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      Band offset transitivity at the InGaAs/InAlAs/InP(001) heterointerfaces

      Applied Physics Letters
      AIP Publishing

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          Acoustic deformation potentials and heterostructure band offsets in semiconductors

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            Theoretical study of band offsets at semiconductor interfaces

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              Measurement of the conduction‐band discontinuity of molecular beam epitaxial grown In0.52Al0.48As/In0.53Ga0.47As,N‐nheterojunction byC‐Vprofiling

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                Author and article information

                Journal
                Applied Physics Letters
                Appl. Phys. Lett.
                AIP Publishing
                0003-6951
                1077-3118
                April 22 1991
                April 22 1991
                : 58
                : 16
                : 1759-1761
                Article
                10.1063/1.105082
                a8ad9478-dcca-4bc9-80de-29dcdb719ca8
                © 1991
                History

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