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      Valence‐band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x‐ray photoemission spectroscopy

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      Applied Physics Letters

      AIP Publishing

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          Journal
          Applied Physics Letters
          Appl. Phys. Lett.
          AIP Publishing
          0003-6951
          1077-3118
          April 29 1996
          April 29 1996
          : 68
          : 18
          : 2541-2543
          Article
          10.1063/1.116177
          © 1996
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