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      Recombination mechanisms and doping density in silicon

      Author(s): ,
      Publication date Created:
      Publication date (Print):
      Journal: Journal of Applied Physics
      Publisher: AIP Publishing

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          Carrier mobilities in silicon empirically related to doping and field

          D.M. Caughey, R.E. Thomas (1967)
          Article 0 comments Cited 208 times – based on 0 reviews     Review now
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            Auger coefficients for highly doped and highly excited silicon

            W. Schmid, J. Dziewior (1977)
            Article 0 comments Cited 193 times – based on 0 reviews     Review now
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              Auger Effect in Semiconductors

              A. Beattie, P. T. Landsberg (1959)
              Article 0 comments Cited 176 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: Journal of Applied Physics
                Abbreviated Title: Journal of Applied Physics
                Publisher: AIP Publishing
                ISSN (Print): 0021-8979
                ISSN (Electronic): 1089-7550
                Publication date Created: July 1983
                Publication date (Print): July 1983
                Volume: 54
                Issue: 7
                Pages: 3935-3937
                Article
                DOI: 10.1063/1.332568
                SO-VID: 47008a63-ed7c-46ba-a716-7f44f3edcaff
                Copyright © © 1983
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