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      Device-Quality $\beta$-Ga$_{2}$O$_{3}$ Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy

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          Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

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            Deep-ultraviolet transparent conductive β-Ga2O3 thin films

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              Optical Absorption and Photoconductivity in the Band Edge ofβ−Ga2O3

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                Author and article information

                Journal
                APEPC4
                Applied Physics Express
                Appl. Phys. Express
                Japan Society of Applied Physics
                1882-0778
                1882-0786
                March 2012
                February 28 2012
                : 5
                : 3
                : 035502
                Article
                10.1143/APEX.5.035502
                48653128-7926-4b7c-85b2-8018b223f747
                © 2012
                History

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