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Variation in the effective Richardson constant of a metal‐silicon contact due to metal‐film thickness
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- Record: found
- Abstract: not found
- Article: not found
Refractory silicides for integrated circuits
S. P. Murarka (1980)
- Record: found
- Abstract: not found
- Article: not found
Formation of Ultrathin Single-Crystal Silicide Films on Si: Surface and Interfacial Stabilization of Si-Ni\({\mathrm{Si}}_{2}\)Epitaxial Structures
J. Poate, R. T. Tung, J M Gibson (1983)
- Record: found
- Abstract: not found
- Article: not found
Chemical Bonding and Structure of Metal-Semiconductor Interfaces
J M Andrews, J. Phillips (1975)