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      Effect of film thickness and evaporation rate on co-evaporated SnSe thin films for photovoltaic applications

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      Author(s): , , , , , , , ,
      Publication date (Electronic, pub):
      Publication date (Electronic, collection):
      Journal: RSC Advances
      Publisher: The Royal Society of Chemistry

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          Abstract

          SnSe thin films were deposited by a co-evaporation method with different film thicknesses and evaporation rates. A device with a structure of soda-lime glass/Mo/SnSe/CdS/i-ZnO/ITO/Ni/Al was fabricated. Device efficiency was improved from 0.18% to 1.02% by a film thickness of 1.3 μm and evaporation rate of 2.5 Å S −1 via augmentation of short-circuit current density and open-circuit voltage. Properties (electrical, optical, structural) and scanning electron microscopy measurements were compared for samples. A SnSe thin-film solar cell prepared with a film thickness of 1.3 μm and evaporation rate of 2.5 Å S −1 had the highest electron mobility, better crystalline properties, and larger grain size compared with the other solar cells prepared. These data can be used to guide growth of high-quality SnSe thin films, and contribute to development of efficient SnSe thin-film solar cells using an evaporation-based method.

          Abstract

          SnSe thin films were deposited by a co-evaporation method with different film thicknesses and evaporation rates.

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          Most cited references28

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          Tin Selenide (SnSe): Growth, Properties, and Applications

          Weiran Shi, Minxuan Gao, Jinping WEI … (2018)
          Abstract The indirect bandgap semiconductor tin selenide (SnSe) has been a research hotspot in the thermoelectric fields since a ZT (figure of merit) value of 2.6 at 923 K in SnSe single crystals along the b‐axis is reported. SnSe has also been extensively studied in the photovoltaic (PV) application for its extraordinary advantages including excellent optoelectronic properties, absence of toxicity, cheap raw materials, and relative abundance. Moreover, the thermoelectric and optoelectronic properties of SnSe can be regulated by the structural transformation and appropriate doping. Here, the studies in SnSe research, from its evolution to till now, are reviewed. The growth, characterization, and recent developments in SnSe research are discussed. The most popular growth techniques that have been used to prepare SnSe materials are discussed in detail with their recent progress. Important phenomena in the growth of SnSe as well as the problems remaining for future study are discussed. The applications of SnSe in the PV fields, Li‐ion batteries, and other emerging fields are also discussed.
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            Structure and electronic properties of grain boundaries in earth-abundant photovoltaic absorber Cu2ZnSnSe4.

            Junwen Li, D Mitzi, Vivek Shenoy (2011)
            We have studied the atomic and electronic structure of Cu(2)ZnSnSe(4) and CuInSe(2) grain boundaries using first-principles calculations. We find that the constituent atoms at the grain boundary in Cu(2)ZnSnSe(4) create localized defect states that promote the recombination of photon-excited electron and hole carriers. In distinct contrast, significantly lower density of defect states is found at the grain boundaries in CuInSe(2), which is consistent with the experimental observation that CuInSe(2) solar cells exhibit high conversion efficiency without the need for deliberate passivation. Our investigations suggest that it is essential to effectively remove these defect states in order to improve the conversion efficiency of solar cells with Cu(2)ZnSnSe(4) as photovoltaic absorber materials. © 2011 American Chemical Society
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              Electrodeposited tin selenide thin films for photovoltaic applications

              N.R. Mathews, N. MATHEWS, NR Mathews (2012)
              Article 0 comments Cited 11 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Journal ID (nlm-ta): RSC Adv
                Journal ID (iso-abbrev): RSC Adv
                Journal ID (publisher-id): RA
                Journal ID (coden): RSCACL
                Title: RSC Advances
                Publisher: The Royal Society of Chemistry
                ISSN (Electronic): 2046-2069
                Publication date (Electronic, pub): 29 April 2020
                Publication date (Electronic, collection): 23 April 2020
                Publication date PMC-release: 29 April 2020
                Volume: 10
                Issue: 28
                Pages: 16749-16755
                Affiliations
                [a] Engineering Research Center of Nanoelectronic Integration and Advanced Equipment, Ministry of Education, School of Communication and Electronic Engineering, East China Normal University China
                [b] Engineering Research Center of Nanoelectronic Integration and Advanced Equipment, Ministry of Education, School of Physics and Electronic Science, East China Normal University China
                [c] School of Computer and Information, Hohai University China
                Author information
                https://orcid.org/0000-0003-4603-9501
                https://orcid.org/0000-0002-3870-8974
                Article
                Publisher ID: d0ra01749c
                DOI: 10.1039/d0ra01749c
                PMC ID: 9053071
                PubMed ID: 35498847
                SO-VID: 4b601d33-5eda-4227-aa1a-0f70d562ea60
                Copyright © This journal is © The Royal Society of Chemistry
                History
                Date received : 24 February 2020
                Date accepted : 27 March 2020
                Page count
                Pages: 7
                Categories
                Subject: Chemistry
                Custom metadata
                pubstatus Paginated Article

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