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      Low-temperature operation of AlGaN single-quantum-well light-emitting diodes with deep ultraviolet emission at 285 nm

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          Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures

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            Crack-free thick AlGaN grown on sapphire using AlN/AlGaN superlattices for strain management

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              Low‐temperature study of current and electroluminescence in InGaN/AlGaN/GaN double‐heterostructure blue light‐emitting diodes

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                Author and article information

                Journal
                Applied Physics Letters
                Appl. Phys. Lett.
                AIP Publishing
                0003-6951
                1077-3118
                October 14 2002
                October 14 2002
                : 81
                : 16
                : 2938-2940
                Article
                10.1063/1.1516631
                4fecf64f-60ea-4aab-88b7-ff2acbc81508
                © 2002
                History

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