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      Milliwatt power deep ultraviolet light-emitting diodes over sapphire with emission at 278 nm

      , , , , , , , , ,
      Applied Physics Letters
      AIP Publishing

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          Efficient and high-power AlGaN-based ultraviolet light-emitting diode grown on bulk GaN

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            Crack-free thick AlGaN grown on sapphire using AlN/AlGaN superlattices for strain management

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              AlN/AlGaN superlattices as dislocation filter for low-threading-dislocation thick AlGaN layers on sapphire

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                Author and article information

                Journal
                Applied Physics Letters
                Appl. Phys. Lett.
                AIP Publishing
                0003-6951
                1077-3118
                December 23 2002
                December 23 2002
                : 81
                : 26
                : 4910-4912
                Article
                10.1063/1.1531835
                bfa500d5-44e3-42a7-8461-a10bf8c88c54
                © 2002
                History

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