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      Current Rectification in a Structure: ReSe 2/Au Contacts on Both Sides of ReSe 2

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          Abstract

          Schottky effect of two-dimensional materials is important for nanoscale electrics. A ReSe 2 flake is transferred to be suspended between an Au sink and an Au nanofilm. This device is initially designed to measure the transport properties of the ReSe 2 flake. However, a rectification behavior is observed in the experiment from 273 to 340 K. The rectification coefficient is about 10. The microstructure and elements composition are systematically analyzed. The ReSe 2 flake and the Au film are found to be in contact with the Si substrate from the scanning electron microscope image in slant view of 45°. The ReSe 2/Si and Si/Au contacts are p-n heterojunction and Schottky contacts. Asymmetry of both contacts results in the rectification behavior. The prediction based on the thermionic emission theory agrees well with experimental data.

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          Strong light-matter interactions in heterostructures of atomically thin films.

          L. Britnell, R. Ribeiro, A Eckmann … (2013)
          The isolation of various two-dimensional (2D) materials, and the possibility to combine them in vertical stacks, has created a new paradigm in materials science: heterostructures based on 2D crystals. Such a concept has already proven fruitful for a number of electronic applications in the area of ultrathin and flexible devices. Here, we expand the range of such structures to photoactive ones by using semiconducting transition metal dichalcogenides (TMDCs)/graphene stacks. Van Hove singularities in the electronic density of states of TMDC guarantees enhanced light-matter interactions, leading to enhanced photon absorption and electron-hole creation (which are collected in transparent graphene electrodes). This allows development of extremely efficient flexible photovoltaic devices with photoresponsivity above 0.1 ampere per watt (corresponding to an external quantum efficiency of above 30%).
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            Electrically Tunable Excitonic Light Emitting Diodes based on Monolayer WSe2 p-n Junctions

            Jiaqiang Yan, D. G. Mandrus, Kenji Kitamura … (2013)
            Light-emitting diodes are of importance for lighting, displays, optical interconnects, logic and sensors. Hence the development of new systems that allow improvements in their efficiency, spectral properties, compactness and integrability could have significant ramifications. Monolayer transition metal dichalcogenides have recently emerged as interesting candidates for optoelectronic applications due to their unique optical properties. Electroluminescence has already been observed from monolayer MoS2 devices. However, the electroluminescence efficiency was low and the linewidth broad due both to the poor optical quality of MoS2 and to ineffective contacts. Here, we report electroluminescence from lateral p-n junctions in monolayer WSe2 induced electrostatically using a thin boron nitride support as a dielectric layer with multiple metal gates beneath. This structure allows effective injection of electrons and holes, and combined with the high optical quality of WSe2 it yields bright electroluminescence with 1000 times smaller injection current and 10 times smaller linewidth than in MoS2. Furthermore, by increasing the injection bias we can tune the electroluminescence between regimes of impurity-bound, charged, and neutral excitons. This system has the required ingredients for new kinds of optoelectronic devices such as spin- and valley-polarized light-emitting diodes, on-chip lasers, and two-dimensional electro-optic modulators.
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              Optoelectronics with electrically tunable PN diodes in a monolayer dichalcogenide

              Britton W. H. Baugher, Yafang Yang, Hugh Churchill … (2013)
              One of the most fundamental devices for electronics and optoelectronics is the PN junction, which provides the functional element of diodes, bipolar transistors, photodetectors, LEDs, and solar cells, among many other devices. In conventional PN junctions, the adjacent p- and n-type regions of a semiconductor are formed by chemical doping. Materials with ambipolar conductance, however, allow for PN junctions to be configured and modified by electrostatic gating. This electrical control enables a single device to have multiple functionalities. Here we report ambipolar monolayer WSe2 devices in which two local gates are used to define a PN junction exclusively within the sheet of WSe2. With these electrically tunable PN junctions, we demonstrate both PN and NP diodes with ideality factors better than 2. Under excitation with light, the diodes show photodetection responsivity of 210 mA/W and photovoltaic power generation with a peak external quantum efficiency of 0.2%, promising numbers for a nearly transparent monolayer sheet in a lateral device geometry. Finally, we demonstrate a light-emitting diode based on monolayer WSe2. These devices provide a fundamental building block for ubiquitous, ultra-thin, flexible, and nearly transparent optoelectronic and electronic applications based on ambipolar dichalcogenide materials.
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                Author and article information

                Contributors
                Weigang Ma: maweigang@tsinghua.edu.cn
                Journal
                Journal ID (nlm-ta): Nanoscale Res Lett
                Journal ID (iso-abbrev): Nanoscale Res Lett
                Title: Nanoscale Research Letters
                Publisher: Springer US (New York )
                ISSN (Print): 1931-7573
                ISSN (Electronic): 1556-276X
                Publication date (Electronic): 3 January 2019
                Publication date PMC-release: 3 January 2019
                Publication date Collection: 2019
                Volume: 14
                Electronic Location Identifier: 1
                Affiliations
                [1 ]ISNI 0000 0004 0644 5174, GRID grid.411519.9, Beijing Key Laboratory of Process Fluid Filtration and Separation, College of Mechanical and Transportation Engineering, , China University of Petroleum-Beijing, ; Beijing, 102249 China
                [2 ]ISNI 0000 0001 0662 3178, GRID grid.12527.33, Key Laboratory for Thermal Science and Power Engineering of Ministry of Education, Department of Engineering Mechanics, , Tsinghua University, ; Beijing, 100084 China
                [3 ]ISNI 0000 0001 0662 3178, GRID grid.12527.33, Department of Chemistry, , Tsinghua University, ; Beijing, 100084 China
                Article
                Publisher ID: 2843
                DOI: 10.1186/s11671-018-2843-4
                PMC ID: 6318160
                PubMed ID: 30607516
                SO-VID: 57747a39-eca4-45e7-a40d-87f86edb70c4
                Copyright © © The Author(s). 2019
                License:

                Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License ( http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.

                History
                Date received : 24 October 2018
                Date accepted : 20 December 2018
                Funding
                Funded by: FundRef http://dx.doi.org/10.13039/501100001809, National Natural Science Foundation of China;
                Award ID: 51776224
                Categories
                Subject: Nano Express
                Custom metadata
                issue-copyright-statement © The Author(s) 2019

                ScienceOpen disciplines: Nanomaterials
                Keywords: rese2,rectification,two-dimensional materials
                Data availability:
                ScienceOpen disciplines: Nanomaterials
                Keywords: rese2, rectification, two-dimensional materials

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