Microwave characteristics of BARITT diodes based on silicon carbide

Aroutiounian, V.M.; Buniatian, V.V.; Soukiassian, P

doi:10.1016/S0038-1101(98)00279-2

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Microwave characteristics of BARITT diodes based on silicon carbide

Author(s): V.M. Aroutiounian , V.V. Buniatian , P. Soukiassian

Publication date Created: February 1999

Publication date (Print): February 1999

Journal: Solid-State Electronics

Publisher: Elsevier BV

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Title: Solid-State Electronics

Abbreviated Title: Solid-State Electronics

Publisher: Elsevier BV

ISSN (Print): 00381101

Publication date Created: February 1999

Publication date (Print): February 1999

Volume: 43

Issue: 2

Pages: 343-348

Article

DOI: 10.1016/S0038-1101(98)00279-2

SO-VID: 5aa112ff-d64e-4b6d-ac90-0efcb099dfa7

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https://www.elsevier.com/tdm/userlicense/1.0/

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Microwave characteristics of BARITT diodes based on silicon carbide

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Paul Drude Institute for Solid State Electronics (PDI)

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