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      Power electronics on InAlN/(In)GaN: Prospect for a record performance

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      Publication date (Print):
      Journal: IEEE Electron Device Letters
      Publisher: Institute of Electrical and Electronics Engineers (IEEE)

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          GaN: Processing, defects, and devices

          S Pearton, F Ren, R. J. Shul … (1999)
          Article 0 comments Cited 333 times – based on 0 reviews     Review now
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            III–nitrides: Growth, characterization, and properties

            S Jain, J. Narayan, R. Van Overstraeten … (2000)
            Article 0 comments Cited 221 times – based on 0 reviews     Review now
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              Determination of the band-gap energy of Al1−xInxN grown by metal–organic chemical-vapor deposition

              K S Kim, K. Lim, M Razeghi … (1997)
              Article 0 comments Cited 28 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: IEEE Electron Device Letters
                Abbreviated Title: IEEE Electron Device Lett.
                Publisher: Institute of Electrical and Electronics Engineers (IEEE)
                ISSN (Print): 0741-3106
                ISSN (Electronic): 1558-0563
                Publication date Created: November 2001
                Publication date (Print): November 2001
                Volume: 22
                Issue: 11
                Pages: 510-512
                Article
                DOI: 10.1109/55.962646
                SO-VID: 5c66bc12-1f93-4fb6-87a6-488999c106be
                Copyright © © 2001
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