ScienceOpen:
research and publishing network
For Publishers
Discovery
Metadata
Peer review
Hosting
Publishing
For Researchers
Join
Publish
Review
Collect
My ScienceOpen
Sign in
Register
Dashboard
Blog
About
Search
Advanced search
My ScienceOpen
Sign in
Register
Dashboard
Search
Search
Advanced search
For Publishers
Discovery
Metadata
Peer review
Hosting
Publishing
For Researchers
Join
Publish
Review
Collect
Blog
About
42
views
269
references
Top references
cited by
39
Cite as...
0 reviews
Review
0
comments
Comment
0
recommends
+1
Recommend
0
collections
Add to
0
shares
Share
Twitter
Sina Weibo
Facebook
Email
3,135
similar
All similar
Record
: found
Abstract
: not found
Article
: not found
Semiconducting and other major properties of gallium arsenide
Author(s):
J. S. Blakemore
Publication date
Created:
October 1982
Publication date
(Print):
October 1982
Journal:
Journal of Applied Physics
Publisher:
AIP Publishing
Read this article at
ScienceOpen
Publisher
Review
Review article
Invite someone to review
Bookmark
Cite as...
There is no author summary for this article yet. Authors can add summaries to their articles on ScienceOpen to make them more accessible to a non-specialist audience.
Related collections
Shewanella
Most cited references
269
Record
: found
Abstract
: not found
Article
: not found
Temperature dependence of the energy gap in semiconductors
Y.P. Varshni
(1967)
0
comments
Cited
973
times
– based on
0
reviews
Review now
Bookmark
Record
: found
Abstract
: not found
Article
: not found
The Long-Wavelength Edge of Photographic Sensitivity and of the Electronic Absorption of Solids
Franz Urbach
(1953)
0
comments
Cited
760
times
– based on
0
reviews
Review now
Bookmark
Record
: found
Abstract
: not found
Article
: not found
Intensity of Optical Absorption by Excitons
R Elliott
(1957)
0
comments
Cited
679
times
– based on
0
reviews
Review now
Bookmark
All references
Author and article information
Journal
Title:
Journal of Applied Physics
Abbreviated Title:
Journal of Applied Physics
Publisher:
AIP Publishing
ISSN (Print):
0021-8979
ISSN (Electronic):
1089-7550
Publication date Created:
October 1982
Publication date (Print):
October 1982
Volume
: 53
Issue
: 10
Pages
: R123-R181
Article
DOI:
10.1063/1.331665
SO-VID:
5cc3546c-178a-434d-b73b-3fce9e87931e
Copyright ©
© 1982
History
Data availability:
Comments
Comment on this article
Sign in to comment
scite_
Similar content
3,135
Structural and magnetic phase transitions in the ternary iron arsenides SrFe2As2 and EuFe2As2
Authors:
Rainer Poettgen
,
Dirk Johrendt
,
Veronika Weiss
…
974. Vapour phase growth of gallium arsenide
Authors:
The location of the lowest conduction band minima in gallium phosphide from bound exciton luminescence
Authors:
P.J. Dean
,
D.C. Herbert
See all similar
Cited by
712
Spintronics: Fundamentals and applications
Authors:
Igor Zutić
,
Jaroslav Fabian
,
S Das Sarma
Room temperature excitonic nonlinear absorption and refraction in GaAs/AlGaAs multiple quantum well structures
Authors:
W. Wiegmann
,
D Chemla
,
D. Miller
…
Silicon quantum electronics
Authors:
Floris Zwanenburg
,
Andrew S. Dzurak
,
Andrea Morello
…
See all cited by
Most referenced authors
1,550
Y. Zhang
B Li
G Chen
See all reference authors
Version 1
- Current
Version 1