6
views
0
recommends
+1 Recommend
0 collections
    0
    shares
      • Record: found
      • Abstract: not found
      • Article: not found

      Encoding neural and synaptic functionalities in electron spin: A pathway to efficient neuromorphic computing

      1 , 1
      Applied Physics Reviews
      AIP Publishing

      Read this article at

      ScienceOpenPublisher
      Bookmark
          There is no author summary for this article yet. Authors can add summaries to their articles on ScienceOpen to make them more accessible to a non-specialist audience.

          Related collections

          Most cited references90

          • Record: found
          • Abstract: found
          • Article: not found

          Short-term synaptic plasticity.

          Synaptic transmission is a dynamic process. Postsynaptic responses wax and wane as presynaptic activity evolves. This prominent characteristic of chemical synaptic transmission is a crucial determinant of the response properties of synapses and, in turn, of the stimulus properties selected by neural networks and of the patterns of activity generated by those networks. This review focuses on synaptic changes that result from prior activity in the synapse under study, and is restricted to short-term effects that last for at most a few minutes. Forms of synaptic enhancement, such as facilitation, augmentation, and post-tetanic potentiation, are usually attributed to effects of a residual elevation in presynaptic [Ca(2+)]i, acting on one or more molecular targets that appear to be distinct from the secretory trigger responsible for fast exocytosis and phasic release of transmitter to single action potentials. We discuss the evidence for this hypothesis, and the origins of the different kinetic phases of synaptic enhancement, as well as the interpretation of statistical changes in transmitter release and roles played by other factors such as alterations in presynaptic Ca(2+) influx or postsynaptic levels of [Ca(2+)]i. Synaptic depression dominates enhancement at many synapses. Depression is usually attributed to depletion of some pool of readily releasable vesicles, and various forms of the depletion model are discussed. Depression can also arise from feedback activation of presynaptic receptors and from postsynaptic processes such as receptor desensitization. In addition, glial-neuronal interactions can contribute to short-term synaptic plasticity. Finally, we summarize the recent literature on putative molecular players in synaptic plasticity and the effects of genetic manipulations and other modulatory influences.
            Bookmark
            • Record: found
            • Abstract: found
            • Article: not found

            Nanoscale memristor device as synapse in neuromorphic systems.

            A memristor is a two-terminal electronic device whose conductance can be precisely modulated by charge or flux through it. Here we experimentally demonstrate a nanoscale silicon-based memristor device and show that a hybrid system composed of complementary metal-oxide semiconductor neurons and memristor synapses can support important synaptic functions such as spike timing dependent plasticity. Using memristors as synapses in neuromorphic circuits can potentially offer both high connectivity and high density required for efficient computing.
              Bookmark
              • Record: found
              • Abstract: found
              • Article: not found

              A perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction.

              Magnetic tunnel junctions (MTJs) with ferromagnetic electrodes possessing a perpendicular magnetic easy axis are of great interest as they have a potential for realizing next-generation high-density non-volatile memory and logic chips with high thermal stability and low critical current for current-induced magnetization switching. To attain perpendicular anisotropy, a number of material systems have been explored as electrodes, which include rare-earth/transition-metal alloys, L1(0)-ordered (Co, Fe)-Pt alloys and Co/(Pd, Pt) multilayers. However, none of them so far satisfy high thermal stability at reduced dimension, low-current current-induced magnetization switching and high tunnel magnetoresistance ratio all at the same time. Here, we use interfacial perpendicular anisotropy between the ferromagnetic electrodes and the tunnel barrier of the MTJ by employing the material combination of CoFeB-MgO, a system widely adopted to produce a giant tunnel magnetoresistance ratio in MTJs with in-plane anisotropy. This approach requires no material other than those used in conventional in-plane-anisotropy MTJs. The perpendicular MTJs consisting of Ta/CoFeB/MgO/CoFeB/Ta show a high tunnel magnetoresistance ratio, over 120%, high thermal stability at dimension as low as 40 nm diameter and a low switching current of 49 microA.
                Bookmark

                Author and article information

                Journal
                Applied Physics Reviews
                Applied Physics Reviews
                AIP Publishing
                1931-9401
                December 2017
                December 2017
                : 4
                : 4
                : 041105
                Affiliations
                [1 ]School of Electrical & Computer Engineering, Purdue University, West Lafayette, Indiana 47907, USA
                Article
                10.1063/1.5012763
                5ebaf233-b8b7-4e35-aa2d-4e2edd48d6ad
                © 2017

                https://publishing.aip.org/authors/rights-and-permissions

                History

                Comments

                Comment on this article