A new scaling theory for fully-depleted SOI double-gate MOSFET’s: including effective conducting path effect (ECPE)

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Journal

Title: Solid-State Electronics

Abbreviated Title: Solid-State Electronics

Publisher: Elsevier BV

ISSN (Print): 00381101

Publication date Created: March 2005

Publication date (Print): March 2005

Volume: 49

Issue: 3

Pages: 317-322

Article

DOI: 10.1016/j.sse.2004.10.008

SO-VID: 6858ad1d-0cfb-4072-8aea-c5fa78f827a6

License:

https://www.elsevier.com/tdm/userlicense/1.0/

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