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      Magneto-Optical and Muliferroic Properties of Transition-Metal (Fe, Co, or Ni)-Doped ZnO Layers Deposited by ALD

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          Abstract

          ZnO doped with transition metals (Co, Fe, or Ni) that have non-compensated electron spins attracts particular interest as it can induce various magnetic phenomena and behaviors. The advanced atomic layer deposition (ALD) technique makes it possible to obtain very thin layers of doped ZnO with controllable thicknesses and compositions that are compatible with the main microelectronic technologies, which further boosts the interest. The present study provides an extended analysis of the magneto-optical MO Kerr effect and the dielectric properties of (Co, Fe, or Ni)-doped ZnO films prepared by ALD. The structural, magneto-optical, and dielectric properties were considered in relation to the technological details of the ALD process and the corresponding dopant effects. All doped samples show a strong MO Kerr behavior with a substantial magnetization response and very high values of the Kerr polarization angle, especially in the case of ZnO/Fe. In addition, the results give evidence that Fe-doped ZnO also demonstrates a ferroelectric behavior. In this context, the observed rich and versatile physical nature and functionality open up new prospects for the application of these nanostructured materials in advanced electronic, spintronic, and optical devices.

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          VESTA 3for three-dimensional visualization of crystal, volumetric and morphology data

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            Zener model description of ferromagnetism in zinc-blende magnetic semiconductors

            Ferromagnetism in manganese compound semiconductors not only opens prospects for tailoring magnetic and spin-related phenomena in semiconductors with a precision specific to III-V compounds but also addresses a question about the origin of the magnetic interactions that lead to a Curie temperature (T(C)) as high as 110 K for a manganese concentration of just 5%. Zener's model of ferromagnetism, originally proposed for transition metals in 1950, can explain T(C) of Ga(1-)(x)Mn(x)As and that of its II-VI counterpart Zn(1-)(x)Mn(x)Te and is used to predict materials with T(C) exceeding room temperature, an important step toward semiconductor electronics that use both charge and spin.
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              Fundamentals of zinc oxide as a semiconductor

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                Author and article information

                Journal
                ACS Omega
                ACS Omega
                ao
                acsodf
                ACS Omega
                American Chemical Society
                2470-1343
                14 November 2022
                29 November 2022
                : 7
                : 47
                : 43306-43315
                Affiliations
                []Institute of Solid State Physics, Bulgarian Academy of Sciences , 72 Tsarigradsko Chaussee Blvd., Sofia1784, Bulgaria
                []Institute of Optical Materials and Technologies, Bulgarian Academy of Sciences , Acad. G. Bonchev Str, Bl.109, SofiaBG-1113, Bulgaria
                [§ ]Department of Physics “E.R. Caianiello”, University of Salerno , via Giovanni Paolo II, 132, Fisciano (SALERNO)I-84084, Italy
                []CNR-SPIN Salerno , via Giovanni Paolo II, 132, Fisciano (SALERNO)I-84084, Italy
                []Institute of General and Inorganic Chemistry, Bulgarian Academy of Sciences , Acad. G. Bonchev Str., Bl.10, SofiaBG-1113Bulgaria
                Author notes
                Author information
                https://orcid.org/0000-0002-4409-1915
                Article
                10.1021/acsomega.2c06240
                9713891
                36467919
                694ae7eb-7db3-4970-8b55-2edbdd983a13
                © 2022 The Authors. Published by American Chemical Society

                Permits non-commercial access and re-use, provided that author attribution and integrity are maintained; but does not permit creation of adaptations or other derivative works ( https://creativecommons.org/licenses/by-nc-nd/4.0/).

                History
                : 27 September 2022
                : 03 November 2022
                Funding
                Funded by: Bulgarian National Science Fund, doi 10.13039/501100003336;
                Award ID: KP-06-H28/9
                Funded by: G. Nadjakov Institute of Solid State Physics, Bulgarian Academy of Sciences, doi NA;
                Award ID: NA
                Funded by: Università degli Studi di Salerno, doi 10.13039/501100007065;
                Award ID: NA
                Funded by: Consiglio Nazionale delle Ricerche, doi 10.13039/501100004462;
                Award ID: NA
                Categories
                Article
                Custom metadata
                ao2c06240
                ao2c06240

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