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      Efficient Two-Dimensional Tin Halide Perovskite Light-Emitting Diodes via a Spacer Cation Substitution Strategy.

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          Abstract

          Lead halide perovskites have attracted tremendous attention because of their impressive optoelectronic properties. However, the toxicity of lead remains a bottleneck for further commercial development. Two-dimensional Ruddlesden-Popper tin-based perovskites are lead-free and more stable compared to their three-dimensional counterparts, which have great potential in the optoelectronic device field. Herein, we demonstrate high-quality two-dimensional phenylethylammonium tin-iodide perovskite (PEA2SnI4) thin films by using toluene as the antisolvent. Furthermore, the PeLED performance is greatly improved by replacing the PEAI spacer cation with 2-thiopheneethyllamine iodide (TEAI). As a result, a TEA-based PeLED device is achieved with a low turn-on voltage of 2.3 V, a maximum luminance of 322 cd m-2, and maximum external quantum efficiency of 0.62%, which are the highest efficiency and brightness for pure red (emission peak = 638 nm) tin-based PeLEDs to date.

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          Author and article information

          Journal
          J Phys Chem Lett
          The journal of physical chemistry letters
          American Chemical Society (ACS)
          1948-7185
          1948-7185
          Feb 06 2020
          : 11
          : 3
          Affiliations
          [1 ] State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources , North China Electric Power University , Beijing 102206 , China.
          [2 ] Beijing Advanced Innovation Center for Soft Matter Science and Engineering , Beijing University of Chemical Technology , Beijing 100029 , China.
          [3 ] Institute of Applied Physics and Materials Engineering , University of Macau , Taipa , Macau , China.
          [4 ] NAAM Research Group, Faculty of Science , King Abdulaziz University , Jeddah 21589 , Saudi Arabia.
          [5 ] State key Laboratory of Molecular Reaction Dynamics , Dalian Institute of Chemical Physics, Chinese Academy of Sciences , 457 Zhongshan Road , Dalian 116023 , China.
          [6 ] CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience , National Center for Nanoscience and Technology , Beijing 100190 , China.
          Article
          10.1021/acs.jpclett.9b03565
          31967834
          6d97986b-281f-4a18-b904-cc5554e5e3a3
          History

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