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      Topological current divider in a Chern insulator junction

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          Abstract

          A Chern insulator is a two-dimensional material that hosts chiral edge states produced by the combination of topology with time reversal symmetry breaking. Such edge states are perfect one-dimensional conductors, which may exist not only on sample edges, but on any boundary between two materials with distinct topological invariants (or Chern numbers). Engineering of such interfaces is highly desirable due to emerging opportunities of using topological edge states for energy-efficient information transmission. Here, we report a chiral edge-current divider based on Chern insulator junctions formed within the layered topological magnet MnBi 2Te 4. We find that in a device containing a boundary between regions of different thickness, topological domains with different Chern numbers can coexist. At the domain boundary, a Chern insulator junction forms, where we identify a chiral edge mode along the junction interface. We use this to construct topological circuits in which the chiral edge current can be split, rerouted, or switched off by controlling the Chern numbers of the individual domains. Our results demonstrate MnBi 2Te 4 as an emerging platform for topological circuits design.

          Abstract

          Topological materials hold great promise for dissipationless information transmission. Here, the authors create Chern insulator junctions between domains with different Chern numbers in MnBi 2Te 4 to realize the basic operation of a topological circuit.

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          Most cited references40

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          Colloquium: Topological insulators

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            Model for a quantum Hall effect without Landau levels: Condensed-matter realization of the "parity anomaly"

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              Quantum Hall effect in a gate-controlled p-n junction of graphene.

              The unique band structure of graphene allows reconfigurable electric-field control of carrier type and density, making graphene an ideal candidate for bipolar nanoelectronics. We report the realization of a single-layer graphene p-n junction in which carrier type and density in two adjacent regions are locally controlled by electrostatic gating. Transport measurements in the quantum Hall regime reveal new plateaus of two-terminal conductance across the junction at 1 and 32 times the quantum of conductance, e(2)/h, consistent with recent theory. Beyond enabling investigations in condensed-matter physics, the demonstrated local-gating technique sets the foundation for a future graphene-based bipolar technology.
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                Author and article information

                Contributors
                xuxd@uw.edu
                Journal
                Nat Commun
                Nat Commun
                Nature Communications
                Nature Publishing Group UK (London )
                2041-1723
                10 October 2022
                10 October 2022
                2022
                : 13
                : 5967
                Affiliations
                [1 ]GRID grid.34477.33, ISNI 0000000122986657, Department of Physics, , University of Washington, ; Seattle, WA 98195 USA
                [2 ]GRID grid.266097.c, ISNI 0000 0001 2222 1582, Department of Physics and Astronomy, , University of California, ; Riverside, CA 92521 USA
                [3 ]GRID grid.29857.31, ISNI 0000 0001 2097 4281, Department of Physics, , The Pennsylvania State University, ; University Park, PA 16802 USA
                [4 ]GRID grid.34477.33, ISNI 0000000122986657, Department of Materials Science and Engineering, , University of Washington, ; Seattle, WA 98195 USA
                [5 ]GRID grid.451303.0, ISNI 0000 0001 2218 3491, Pacific Northwest National Laboratory, ; Richland, WA USA
                [6 ]GRID grid.135519.a, ISNI 0000 0004 0446 2659, Materials Science and Technology Division, , Oak Ridge National Laboratory, ; Oak Ridge, TN 37831 USA
                Author information
                http://orcid.org/0000-0002-8971-1639
                http://orcid.org/0000-0002-7829-9554
                http://orcid.org/0000-0002-5433-2778
                http://orcid.org/0000-0002-9894-9622
                http://orcid.org/0000-0002-8015-1049
                http://orcid.org/0000-0002-7254-2728
                http://orcid.org/0000-0001-6222-1210
                http://orcid.org/0000-0003-3515-2955
                http://orcid.org/0000-0003-0165-6848
                http://orcid.org/0000-0003-0348-2095
                Article
                33645
                10.1038/s41467-022-33645-7
                9550783
                36216927
                6db373c0-6d06-4272-a249-9901dc8c5f7a
                © The Author(s) 2022

                Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

                History
                : 26 April 2022
                : 21 September 2022
                Funding
                Funded by: - NSF (DMR-2004701) - Hellman Fellowship award
                Funded by: - State of Washington funded Clean Energy Institute
                Funded by: - Gordon and Betty Moore Foundation’s EPiQS Initiative (Grant GBMF9063)
                Funded by: - U.S. Department of Energy, Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division
                Funded by: FundRef https://doi.org/10.13039/100000181, United States Department of Defense | United States Air Force | AFMC | Air Force Office of Scientific Research (AF Office of Scientific Research);
                Award ID: AFOSR FA9550-21-1-0177
                Award Recipient :
                Funded by: - Programmable Quantum Materials, an Energy Frontier Research Center funded by the U.S. Department of Energy (DOE), Office of Science, Basic Energy Sciences (BES), under award DE-SC0019443 - NSF MRSEC DMR-1719797 - U.S. Department of Energy, Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division - Gordon and Betty Moore Foundation’s EPiQS Initiative (Grant GBMF9063) - NSF (DMR-2004701) - Hellman Fellowship award - State of Washington funded Clean Energy Institute
                Categories
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                © The Author(s) 2022

                Uncategorized
                topological insulators,electronic devices,quantum hall
                Uncategorized
                topological insulators, electronic devices, quantum hall

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