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      Dependence of electrical properties on the crystallographic orientation of CBr4-doped GaAs epilayers grown on GaAs substrates by atmospheric pressure metalorganic chemical vapor deposition

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      Microelectronics Journal
      Elsevier BV

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          Journal
          Microelectronics Journal
          Microelectronics Journal
          Elsevier BV
          00262692
          October 1997
          October 1997
          : 28
          : 8-10
          : 1051-1056
          Article
          10.1016/S0026-2692(96)00148-6
          708acb48-6da1-41a6-a7ff-12b58425ac0e
          © 1997

          https://www.elsevier.com/tdm/userlicense/1.0/

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