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      A novel class of oxynitrides stabilized by nitrogen dimer formation

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          Abstract

          Despite the wide applicability of oxynitrides from photocatalysis to refractory coatings, our understanding of the materials has been limited in terms of their thermodynamics. The configurational entropy via randomly mixed O/N or via cation vacancies are known to stabilize oxynitrides, despite the positive formation enthalpies. Here, using tin oxynitrides as a model system, we show by ab initio computations that oxynitrides in seemingly charge-unbalanced composition stabilize by forming pernitrides among metal-(O,N) 6 octahedra. The nitrogen pernitride dimer, =(N-N)=, results in the effective charge of −4, facilitating the formation of nitrogen-rich oxynitrides. We report that the dimer forms only in structures with corner-sharing octahedra, since the N-N bond formation requires sufficient rotational degrees of freedom among the octahedra. X-ray photoemission spectra of the synthesized tin oxynitride films reveal two distinct nitrogen bonding environments, confirming the computation results. This work opens the search space for a novel kind of oxynitrides stabilized by N dimer formation, with specific structural selection rules.

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          Efficient iterative schemes forab initiototal-energy calculations using a plane-wave basis set

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            THE PRINCIPLES DETERMINING THE STRUCTURE OF COMPLEX IONIC CRYSTALS

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              The thermodynamic scale of inorganic crystalline metastability

              Data-mining the stability of 29,902 material phases reveals the thermodynamic landscape of inorganic crystalline metastability.
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                Author and article information

                Contributors
                stkim@kist.re.kr
                cykang@kist.re.kr
                shbaek77@kist.re.kr
                Journal
                Sci Rep
                Sci Rep
                Scientific Reports
                Nature Publishing Group UK (London )
                2045-2322
                27 September 2018
                27 September 2018
                2018
                : 8
                : 14471
                Affiliations
                [1 ]ISNI 0000000121053345, GRID grid.35541.36, Center for Electronic Materials, , Korea Institute of Science and Technology, ; Seoul, 02792 Republic of Korea
                [2 ]ISNI 0000 0001 0840 2678, GRID grid.222754.4, Department of Materials Science and Engineering, , Korea University, ; Seoul, 02841 Republic of Korea
                [3 ]ISNI 0000 0001 1945 5898, GRID grid.419666.a, Materials R&D Center, , Samsung SDI, ; Gyeonggi-do, 16678 Republic of Korea
                [4 ]ISNI 0000 0001 0840 2678, GRID grid.222754.4, KU-KIST Graduate School of Converging Science and Technology, , Korea University, ; Seoul, 02841 Republic of Korea
                [5 ]ISNI 0000 0004 1791 8264, GRID grid.412786.e, Division of Nano & Information Technology, , KIST School, Korea University of Science and Technology, ; Seoul, 02792 Republic of Korea
                Author information
                http://orcid.org/0000-0001-8712-7167
                Article
                32909
                10.1038/s41598-018-32909-x
                6160415
                30262851
                753ccdf4-3524-4624-8999-6066c25326c5
                © The Author(s) 2018

                Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

                History
                : 12 July 2018
                : 18 September 2018
                Funding
                Funded by: FundRef https://doi.org/10.13039/501100003693, Korea Institute of Science and Technology (KIST);
                Award ID: 2E28210
                Award ID: 2E28210
                Award ID: 2E28210
                Award ID: 2E28210
                Award ID: 2E28210
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                Award ID: 2E28210
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